Publikationen der Hochenergie-Astrohysik-Gruppe

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  1. 1.
    Soltau, H.; Krause, N.; Meidinger, N.; Hauff, D.; Krisch, S.; Strüder, L.; Zanthier, C. v.: Defect induced charge transfer losses in high resistivity float zone silicon charge coupled devices. In: Proceedings of the 4th International Symposium on High Purity Silicon, S. 325 - 337 (Hg. Claeys, C.L.). 4th International Symposium on High Purity Silicon, San Antonio, TX, USA, 06. Oktober 1996 - 11. Oktober 1996. Electrochemical Society (1996)
 
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