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Conference Paper (3)

  1. 1.
    Meidinger, N.; Andritschke, R.; Hälker, O.; Hartmann, R.; Hartner, G.; Hasinger, G.; Herrmann, S.; Holl, P.; Hyde, E.; Kimmel, N. et al.; Pfeffermann, E.; Predehl, P.; Soltau, H.; Strüder, L.: Systematic testing and results of X-ray CCDs developed for eROSITA and other applications. In: High Energy, Optical, and Infrared Detectors for Astronomy II, pp. 627618-1 - 627618-11 (Eds. Dorn, D. A.; Holland, A. D.). High Energy, Optical, and Infrared Detectors for Astronomy II, Orlando, Florida, USA, May 24, 2006 - May 27, 2006. The International Society for Optical Engineering, Bellingham, Wash., USA (2006)
  2. 2.
    Pfeffermann, E.; Bonerz, S.; Bräuninger, H.; Briel, U. G.; Friedrich, P.; Hartmann, R.; Hartner, G.; Hasinger, G.; Hippmann, H.; Kendziorra, E. et al.; Kettenring, G.; Kink, W.; Meidinger, N.; Müller, S.; Predehl, P.; Soltau, H.; Strüder, L.; Trümper, J.: Concept of the ROSITA X-ray camera. In: X-Ray and Gamma-Ray Telescopes and Instruments for Astronomy, pp. 849 - 856 (Eds. Trümper, J. E.; Tananbaum, H. D.). X-Ray and Gamma-Ray Telescopes and Instruments for Astronomy, Waikoloa, Hawaii, USA, August 24, 2002 - August 28, 2002. SPIE, Bellingham (2003)
  3. 3.
    Soltau, H.; Krause, N.; Meidinger, N.; Hauff, D.; Krisch, S.; Strüder, L.; Zanthier, C. v.: Defect induced charge transfer losses in high resistivity float zone silicon charge coupled devices. In: Proceedings of the 4th International Symposium on High Purity Silicon, pp. 325 - 337 (Ed. Claeys, C.L.). 4th International Symposium on High Purity Silicon, San Antonio, TX, USA, October 06, 1996 - October 11, 1996. Electrochemical Society (1996)
 
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