Publications

Search results

Conference Paper (1)

  1. 1.
    Soltau, H.; Krause, N.; Meidinger, N.; Hauff, D.; Krisch, S.; Strüder, L.; Zanthier, C. v.: Defect induced charge transfer losses in high resistivity float zone silicon charge coupled devices. In: Proceedings of the 4th International Symposium on High Purity Silicon, pp. 325 - 337 (Ed. Claeys, C.L.). 4th International Symposium on High Purity Silicon, San Antonio, TX, USA, October 06, 1996 - October 11, 1996. Electrochemical Society (1996)
 
loading content