Publikationen der Hochenergie-Astrohysik-Gruppe

Suchergebnisse

Zeitschriftenartikel (1)

  1. 1.
    Strüder, L.; Eckbauer, S.; Hartmann, R.; Hauff, D.; Holl, P.; Kemmer, J.; Lechner, P.; Meidinger, N.; Richter, R.; Soltau, H. et al.; Zanthier, C. v.; Fiorini, C.; Gatti, E.; Longoni, A.; Sampietro, M.: High resolution, high speed detectors with integrated JFET electronics. Journal de Physique IV 7 (Colloque C2), S. 21 - 29 (1997)

Konferenzbeitrag (2)

  1. 2.
    Strüder, L.; Bräuninger, H.; Briel, U.; Hartmann, R.; Hartner, G.; Hauff, D.; Krause, N.; Maier, B.; Meidinger, N.; Pfeffermann, E. et al.; Popp, M.; Reppin, C.; Richter, R.; Stötter, D.; Trümper, J.; Weber, U.; Holl, P.; Kemmer, J.; Soltau, H.; Viehl, A.; Zanthier, C. v.: A 36 cm² large monolythic pn-CCD X-ray detector for the European XMM Satellite Mission. In: Workshop Proceedings: 1997 IEEE Workshop on Charge-Coupled Devices and Advanced Image Sensors, S. R19-1 - R19-4. IEEE Workshop on Charge-Coupled Devices and Advanced Image Sensors, Bruges, Belgium, 05. Juni 1997 - 07. Juni 1997. Institute of Electrical and Electronics Engineers, Bruges, Belgium (1997)
  2. 3.
    Soltau, H.; Krause, N.; Meidinger, N.; Hauff, D.; Krisch, S.; Strüder, L.; Zanthier, C. v.: Defect induced charge transfer losses in high resistivity float zone silicon charge coupled devices. In: Proceedings of the 4th International Symposium on High Purity Silicon, S. 325 - 337 (Hg. Claeys, C.L.). 4th International Symposium on High Purity Silicon, San Antonio, TX, USA, 06. Oktober 1996 - 11. Oktober 1996. Electrochemical Society (1996)
 
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